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FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8

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FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8

Name: FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC8
Brand: Fairchild
Price: 1 USD

Quality FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8 for sale

Model Number : FDS6699S

Place of Origin : America

Brand Name : Fairchild

Packaging Details : Original package

Price : discussible

MOQ : discussible

Payment Terms : L/C, D/A, D/P, D/P, T/T, Western Union, MoneyGram,

Supply Ability : 10000pcs one month

Delivery Time : 3~7days

Type : MOSFET

D/C : 2021

Package Type : SOIC-8

Application : standard

Supplier Type : Original manufacturer, ODM, Agency, Retailer, Other

Media Available : datasheet, Photo, EDA/CAD Models, Other

Brand : Mosfet

Voltage - Collector Emitter Breakdown (Max) : 30.0 V

Operating Temperature : -55 ℃~150 ℃

Mounting Type : Surface Mount

Drain to Source Voltage (Vdss) : 30.0 V

Number of Pins : 8

Max Operating Temperature : 150 °C

Element Configuration : Single

Min Operating Temperature : -55 °C

Rise Time : 12 ns

Rds On Max : 3.6 mΩ

Number of Channels : 1

RoHS : Compliant

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FDS6699S transistor MOS tube N channel SOIC-8

Products Description :

1. Product Model :FDS6699S

2. Description: MOSFET

3. FDS6699S transistor MOSFET N channel 21 A 30 V 3.6 MoHM 10 V 1.4 V

4. High performance Trench technology for extremely low RDS (ON) and fast switching

5. High power and current handling capability

6. 100% RG (gate resistance) tested

Technological Parameters:

Voltage Rating (DC)	30.0 V
Current Rating	21.0 A
Number of Channels	1
Number of Positions	8
Drain to Source Resistance (on) (Rds)	3.6 mΩ
Polarity	N-Channel
Power Dissipation	2.5 mW
Threshold Voltage	1.4 V
Input Capacitance	3.61 nF
Gate Charge	65.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	21.0 A
Rise Time	12 ns

Application:

Household appliances

The FDS6699S is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET™ technology.

Company Advantages:

Shenzhen Ruizhixinda Electronics Co., LTD.

Is a company with decades of experience in the wholesale agency of electronic components,

We have the power of agency and factory cooperation of various components brands.

Extensive and complete electronic components storage warehouse,

Including rare, rare, unique, and now popular components.

Inventory for 100% Original & New products.

If you need any one, please contact us.

We will provide perfect and high quality products.

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